 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMD Type N-Channel 20 -V (D-S) MOSFET KI2312DS SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 1.8-V Rated RoHS Compliant +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150 ) *2 TA=25 ------------------------------------------------TA=70 Pulsed Drain Current *2 Avalanche Current*2 Single Avalanche Energy L = 0.1 mH L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS IS PD Tj.Tstg 1.25 0.8 4.9 3.9 15 15 11.25 1.0 0.75 0.48 -55 to 150 5 sec Steady State 20 8 3.77 3.0 Unit V V A A A mJ A W Continuous Source Current (diode conduction) *2 Power Dissipation *2 TA=25 -------------------------------------------------TA=70 Jumction Temperature and Storage Temperature *1 Surface Mounted on 1"x 1"FR4 Board. *2 Pulse width limited by maximum junction temperature Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Ambient * Maximum Junction-to-Foot t 5 sec Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 /W Unit Steady State Steady State * Surface Mounted on 1"x 1"FR4 Board. www.kexin.com.cn 1 SMD Type KI2312DS Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Symbol Testconditons Transistors Min 20 0.45 Typ Max Unit V V(BR)DSS VGS = 0 V, ID = 250 iA VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 iA VDS = 0 V, VGS = 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 VDS 10V, VGS = 4.5 V 0.65 0.85 100 1 75 nA A A 15 0.027 0.033 0.033 0.040 0.042 0.051 40 0.8 11.2 1.2 14 VGS = 4.5 V, ID = 5.0A Drain-Source On-State Resistance * rDS(on) VGS = 2.5 V, ID = 4.5A VDS =1.8V, ID = 4.0 A Forward Transconductance * Diode Forward Voltage * Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time *Pulse test: PW 300is duty cycle 2%. gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr IF=1.0A,di/dt=100A/is VDD =10V , RL = 10U , ID = 1A , VGEN =-4.5V , RG = 6U VDS = 10V ,VGS = 4.5 V , ID=5.0 A VDS =15V, ID = 5.0 A IS =1.0 A, VGS = 0 V S V 1.4 2.2 15 40 48 31 13 25 60 70 45 25 nC ns Marking Marking C2 2 www.kexin.com.cn |
Price & Availability of KI2312DS
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |